Open AccessA 3.9 µm Ho 3+ :BaY 2 F 8 laser directly pumped by laser diodes
Author(s) -
Ma Chaoqun,
Zhang Ying,
Guo Jiawei,
Cai He,
Han Juhong,
Rong Kepeng,
An Guofei,
Li Haoyu,
Tan Lijuan,
Wang You
Publication year - 2021
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/ell2.12250
Subject(s) - laser , diode , materials science , optics , pulse repetition frequency , far infrared laser , infrared , laser pumping , pulse duration , optical pumping , semiconductor laser theory , optoelectronics , physics , telecommunications , radar , computer science
This study reports a mid‐infrared Ho 3+ :BaY 2 F 8 laser directly pumped by laser diodes (LDs). A finite element method (FEM) was used to calculate the temperature and thermal stress distributions inside the Ho 3+ :BYF crystal. The damage conditions have been evaluated on the basis of the experimental results. Using 889 nm LDs with the repetition frequency and pulse duration of 13 Hz and 100 μs, respectively, an output pulse energy of 1.05 mJ at 3.9 μm for the pump pulse energy of 336.8 mJ was achieved. The study might be useful for constructing a compact and robust mid‐infrared laser.