Open AccessA novel GaN MIS‐HEMT with a floating clamp electrode for suppressing short‐channel effect
Author(s) -
Shi Yijun,
Wang Hongyue
Publication year - 2021
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/ell2.12246
Subject(s) - high electron mobility transistor , materials science , optoelectronics , electrode , transistor , leakage (economics) , threshold voltage , capacitor , electrical engineering , voltage , insulator (electricity) , chemistry , engineering , economics , macroeconomics
In this work, a novel GaN MIS‐HEMT (metal‐insulator‐semiconductor high electron mobility transistors) featuring a floating clamp (FC) electrode is proposed for suppressing the short‐channel effect. By inserting the FC electrode near to the drain‐side gate edge, the transverse potential at the gate edge can be clamped to less than 2 V, thereby the short‐channel effect can be suppressed. Compared to the conventional short‐channel GaN MIS‐HEMT, the proposed device exhibits much decreased off‐state electron density at the drain voltage of 10 V, which leads to the off‐state leakage current decreasing from 10 –1 to 10 –7 A/mm, without an obvious sacrifice of the on‐state current. Meanwhile, the proposed GaN MIS‐HEMT also delivers a much lower reverse gate‐to‐drain capacitor. The excellent characteristics of the proposed GaN MIS‐HEMT show that the device is promising for the future power applications.