Open AccessWafer‐fused 1300 nm VCSELs with an active region based on superlattice
Author(s) -
Blokhin Sergey,
Babichev Andrey,
Gladyshev Andrey,
Karachinsky Leonid,
Novikov Innokenty,
Blokhin Alexey,
Rochas Stanislav,
Denisov Dmitrii,
Voropaev Kirill,
Ionov Alexander,
Ledentsov Nikolay,
Egorov Anton
Publication year - 2021
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/ell2.12232
Subject(s) - materials science , wafer , superlattice , optoelectronics , laser , molecular beam epitaxy , optics , vertical cavity surface emitting laser , epitaxy , gallium arsenide , semiconductor laser theory , quantum well , semiconductor , nanotechnology , physics , layer (electronics)
The 1300 nm range vertical‐cavity surface‐emitting lasers with the active region based on InGaAs/InGaAlAs superlattice are fabricated using molecular‐beam epitaxy and the double wafer‐fusion technique. Lasers with the buried tunnel junction diameter of 5 μm have shown single‐mode CW operation with the output optical power of ∼6 mW at 20°C. Opened eye diagrams are observed up to 10 Gbps.