Wafer‐fused 1300 nm VCSELs with an active region based on superlattice | Zendy

Blokhin Sergey | Zendy; Babichev Andrey | Zendy; Gladyshev Andrey | Zendy; Karachinsky Leonid | Zendy; Novikov Innokenty | Zendy; Blokhin Alexey | Zendy; Rochas Stanislav | Zendy; Denisov Dmitrii | Zendy; Voropaev Kirill | Zendy; Ionov Alexander | Zendy; Ledentsov Nikolay | Zendy; Egorov Anton | Zendy

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Wafer‐fused 1300 nm VCSELs with an active region based on superlattice

Author(s) -

Blokhin Sergey,

Babichev Andrey,

Gladyshev Andrey,

Karachinsky Leonid,

Novikov Innokenty,

Blokhin Alexey,

Rochas Stanislav,

Denisov Dmitrii,

Voropaev Kirill,

Ionov Alexander,

Ledentsov Nikolay,

Egorov Anton

Publication year - 2021

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/ell2.12232

Subject(s) - superlattice , materials science , optoelectronics , wafer , optics , engineering physics , physics

The 1300 nm range vertical‐cavity surface‐emitting lasers with the active region based on InGaAs/InGaAlAs superlattice are fabricated using molecular‐beam epitaxy and the double wafer‐fusion technique. Lasers with the buried tunnel junction diameter of 5 μm have shown single‐mode CW operation with the output optical power of ∼6 mW at 20°C. Opened eye diagrams are observed up to 10 Gbps.

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