Open AccessAn approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold
Author(s) -
Rafiee Mahmood,
Sadeghi Yaqhoub,
Shiri Nabiollah,
Sadeghi Ayoub
Publication year - 2021
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/ell2.12221
Subject(s) - carbon nanotube field effect transistor , threshold voltage , gas compressor , transistor , voltage , computer science , electronic engineering , swing , logic gate , control theory (sociology) , electrical engineering , field effect transistor , materials science , algorithm , engineering , artificial intelligence , mechanical engineering , control (management)
Here, a new 4:2 approximate compressor is presented by the gate diffusion input (GDI) technique. Although GDI cells suffer from threshold voltage drop, the dynamic threshold approach and carbon nanotube field‐effect transistors are merged to overcome the mentioned problem. The proposed cell has full‐swing outputs, while its error and power delay product are at low rates. Therefore, low voltage multipliers that are used in image processing can benefit from the proposed compressor.