Open AccessGeneration of two‐dimensional electron gas to normally depleted AlGaN/GaN hetero‐interface by SiO 2 deposition and subsequent high‐temperature annealing
Author(s) -
Nanjo T.,
Koyama H.,
Imazawa T.,
Kiyoi A.,
Imai A.,
Hayashida T.,
Watahiki T.,
Yamamoto Y.,
Miura N.
Publication year - 2021
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/ell2.12213
Subject(s) - annealing (glass) , x ray photoelectron spectroscopy , materials science , fermi gas , optoelectronics , deposition (geology) , electron , physics , composite material , nuclear magnetic resonance , paleontology , quantum mechanics , sediment , biology
SiO 2 film deposition and subsequent high‐temperature annealing resulted in the generation of a two‐dimensional electron gas (2DEG) at Al(Ga)N/GaN hetero‐interfaces, of which the 2DEG was originally fully depleted. The obtained mobilities and sheet carrier concentrations were over 1100 cm 2 /Vs and 3.0 × 10 12 cm –2 , respectively. Surface energy lowering, which is proof of the generated 2DEG, was observed by electron state analysis using hard X‐ray photoelectron spectroscopy. This damage‐less method that selectively generates a 2DEG can contribute not only toward improving some characteristics in existing devices but also toward creating entirely novel devices.