Open AccessSimple modelling of S‐type NbO x locally active memristor
Author(s) -
Liang Yan,
Wang Guangyi,
Xia Chenyang,
Lu Zhenzhou
Publication year - 2021
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/ell2.12207
Subject(s) - memristor , simple (philosophy) , voltage , neuromorphic engineering , electronic engineering , piecewise , differential (mechanical device) , computer science , current (fluid) , control theory (sociology) , topology (electrical circuits) , engineering , electrical engineering , artificial neural network , mathematics , artificial intelligence , control (management) , aerospace engineering , mathematical analysis , philosophy , epistemology
Nanoscale S‐type NbO x locally active memristors (LAMs) open up new opportunities in the brain‐inspired neuromorphic computing. Simple yet accurate models for these memristors can provide benefits for designing related circuits and systems. Considering that the DC voltage–current plot of the NbO x LAM under current sweeping is composed of three regions, that is, high resistance region, negative differential resistance region, and low resistance region, a three‐segment piecewise‐linear method is applied to fit these three regions. Based on this developed relation of the voltage and current at DC, a simple model for the NbO x LAM is proposed. The parameters of the proposed model can be easily identified in terms of the quasi‐static and dynamic electrical characteristics. A series of numerical simulations corroborate that the proposed model can accurately emulate the quasi‐static voltage–current characteristics and oscillating behaviours of the NbO x LAM.