Open AccessProton implantation in just above active region for improvement of power conversion efficiency of VCSELs
Author(s) -
Miyamoto Tomoyuki,
Sakamoto Hayato
Publication year - 2021
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/ell2.12198
Subject(s) - materials science , optoelectronics , energy conversion efficiency , laser , slope efficiency , power (physics) , electrical efficiency , proton , absorption (acoustics) , voltage , optics , equivalent series resistance , electrical engineering , fiber laser , physics , quantum mechanics , wavelength , composite material , engineering
Improving the power conversion efficiency of vertical cavity surface‐emitting lasers (VCSELs) by three‐dimensionally control of the carrier concentration, which is the main mechanism of the electrical resistance and optical absorption has been investigated using the proton implantation technique just above the active region. The fabricated VCSELs showed improved power conversion efficiency of approximately 3 points without serious deterioration of threshold current and operating voltage. Improvement of slope efficiency from 0.5 W/A to 0.6 W/A is the main cause and these improved the output power by 1.2 times.