Open AccessNovel 1064 nm DBR lasers combining active layer removal and surface gratings
Author(s) -
Brox O.,
Wenzel H.,
Fricke J.,
Della Casa P.,
Maaßdorf A.,
Matalla M.,
Wenzel S.,
Wicht A.,
Knigge A.
Publication year - 2021
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/ell2.12192
Subject(s) - active layer , laser linewidth , materials science , optoelectronics , distributed bragg reflector , laser , fabrication , quantum well , distributed bragg reflector laser , grating , optics , diode , semiconductor laser theory , epitaxy , layer (electronics) , nanotechnology , wavelength , medicine , physics , alternative medicine , pathology , thin film transistor
The fabrication and characterisation details of novel distributed Bragg reflector (DBR) diode lasers emitting around 1064 nm are presented here. The AlGaAs epitaxial layer stack used here allows the removal of the active quantum wells in passive sections where no current is injected. The DBR lasers fabricated with a two‐step epitaxial approach without an active layer in the grating sections show improved performance in terms of power, efficiency, and linewidth in comparison to its all‐active DBR counterparts.