Open AccessA 7.5 mW –43 dB LO leakage source‐driven wideband CMOS millimeter‐wave mixer
Author(s) -
Lin Jiafu,
Boon Chirn Chye,
Berenguer Roc,
Liu Gui
Publication year - 2021
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/ell2.12164
Subject(s) - cmos , extremely high frequency , leakage (economics) , wideband , electrical engineering , transformer , electronic engineering , materials science , physics , optoelectronics , engineering , telecommunications , voltage , economics , macroeconomics
This paper presents a millimeter‐wave (mm‐wave) V‐band mixer. The source‐driven transformer‐coupled up‐converter topology can alleviate the local oscillator (LO) leakage problem. The proposed V‐band up‐converter has been implemented on 65 nm CMOS technology. The experimental results show that the LO leakage level can be reduced to –43.1 dB. The up‐converter occupies 0.11 mm 2 in area excluding signal pads.