Open AccessComplex permittivity control of SiC f /SiC composite through thermal oxidation
Author(s) -
Lee Hyun Seok,
Lee Won Jun
Publication year - 2021
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/ell2.12090
Subject(s) - materials science , permittivity , composite number , silicon carbide , composite material , electrical conductor , dielectric , reflection loss , reflection (computer programming) , optoelectronics , computer science , programming language
In this letter, we propose a process for fabricating a Silicon Carbide fiber (SiC f )/Silicon Carbide (SiC) composite radar‐absorbing structure (RAS); the process can precisely control the complex permittivity of the composite in high‐temperature environments. During the manufacturing of the SiC f /SiC composite, sufficient carbon is supplied to the SiC fibre to ensure conductive properties. Thereafter, thermal oxidation is performed to remove carbon, which transformed the conductive property of the composite material into the dielectric property. The duration of thermal oxidation was controlled because of which the complex permittivity of the composite material approached the optimal complex permittivity for impedance matching. A specimen of the SiC f /SiC composite radar‐absorbing structure was produced, and the reflection loss of the specimen was measured. The results indicated that the specimen could absorb more than 99% of the incident electromagnetic waves in the frequency range from 9.02 to 9.84 GHz.