Open AccessA novel hybrid termination structure for vertical gallium nitride Schottky barrier diode by using technology computer aided design simulation
Author(s) -
Li Jian,
Lin Feng,
Chen Yong,
He Wei,
Liu Xinke
Publication year - 2021
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/ell2.12067
Subject(s) - schottky diode , gallium nitride , materials science , optoelectronics , breakdown voltage , schottky barrier , diode , metal–semiconductor junction , gallium , voltage , nitride , electronic engineering , electrical engineering , engineering , nanotechnology , metallurgy , layer (electronics)
Gallium nitride based high‐power electronic devices are now in full swing. However, the phenomenon that the gallium nitride Schottky diodes break down prematurely without reaching the gallium nitride material limit is unsolved. This paper proposes a novel hybrid termination structure for vertical gallium nitride Schottky diodes to improve breakdown voltage. This work is carried out to simulate the breakdown voltage and reverse characteristics of the vertical gallium nitride Schottky diode by using technology computer aided design (TCAD) simulation. Under the same testing conditions, we demonstrate that compared with the control vertical Schottky diode, the breakdown voltage of the proposed Schottky diode can be significantly advanced, which has increased by 350 V and reached 850 V.