Open AccessA unipolar thin‐film transistor‐based amplifier with enhanced DC offset suppression
Author(s) -
Xu Yuming,
Li Bin,
Zhong Wei,
Deng Sunbin,
Fan Houbo,
Wu Zhaohui,
Yeung Fion Sze Yan,
Kwok Hoi Sing,
Chen Rongsheng
Publication year - 2021
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/ell2.12066
Subject(s) - amplifier , capacitor , transistor , dc bias , offset (computer science) , electrical engineering , thin film transistor , input offset voltage , direct coupled amplifier , operational amplifier , materials science , electronic engineering , optoelectronics , computer science , engineering , voltage , cmos , layer (electronics) , composite material , programming language
Abstract This letter proposes a unipolar thin‐film transistor (TFT)‐based amplifier design that can provide enhanced DC offset suppression. The amplifier consists of an input AC coupling network and a capacitor bootstrap amplifier. By making the first pole of the input AC‐coupling network coincide with that of the capacitor bootstrap amplifier, a DC offset suppression capability of 40 dB/dec, which is 2× higher than that of the prior arts, can be obtained. An implementation is also proposed and a Rensselaer Polytechnic Institute (RPI) TFT model whose parameters are turned to fit the measured data of our metal‐oxide TFT is used to simulate the circuit. Simulation results show that the implementation has 31 dB midband gain, 0.5 Hz–5 kHz bandwidth, 300 μW power consumptions, and the expected 40 dB/dec DC offset suppression. This design is suitable for applications that need to block large DC interference, such as sensor readout amplifiers.