Open AccessMillimetre‐wave high–low IMPATT source development: First on‐chip experimental verification
Author(s) -
Mukherjee Moumita,
Chatterjee Sulagna
Publication year - 2021
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/ell2.12058
Subject(s) - chip , extremely high frequency , diode , materials science , optoelectronics , radio frequency , power (physics) , millimeter , electrical engineering , optics , engineering , physics , quantum mechanics
This paper reports design and development of high–low type Si/SiC‐based Impact Ionisation Avalanche Transit Time device and its on‐chip characterisation. The design has been performed with indigenously developed strain engineered non‐linear self‐consistent large‐signal simulator. On‐chip hetero‐structure SiC Impact Ionisation Avalanche Transit Time at 94 GHz has been successfully fabricated and on‐chip DC testing (forward and reverse) results are reported for the first time. The device breaks down at 185 V (simulated result: 188 V) and breakdown current is ∼12.5 mA. If the diode chip is mounted properly with W‐band waveguide, it is expected to generate ∼2 W of Radio Frequency (RF) power at W‐band window frequency (∼94 GHz). The experimental verification of newly developed in‐house strain‐corrected mixed quantum tunnelling drift diffusion simulator is done successfully.