Open AccessSnapback‐free reverse conducting IGBT with p‐float and n‐ring surrounding trench‐collector
Author(s) -
Li Jie,
Huang Mingmin,
Chen Chang,
Yang Zhimei,
Ma Yao,
Gong Min
Publication year - 2020
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2020.2351
Subject(s) - snapback , insulated gate bipolar transistor , trench , materials science , electrical engineering , bipolar junction transistor , catenary , optoelectronics , voltage , current injection technique , engineering , transistor , composite material , structural engineering , layer (electronics)
A reverse conducting (RC) insulated gate bipolar transistor (IGBT) with p‐float and n‐ring surrounding trench‐collector is proposed. The p‐floats surrounding sidewalls of trench‐collectors suppress snapback and also avoid snapback when there are semiconductor/trench‐collector interface charges ( Q f ). The n‐rings surrounding the top of the trench‐collectors speed up the forward recovery and ensure a high breakdown voltage. Technology computer aided design (TCAD) simulations are carried out to compare the proposed RC‐IGBT and the RC‐IGBT with p‐poly trench‐collector (PTC RC‐IGBT). With Q f = 1 × 10 11 cm −2 , the proposed RC‐IGBT is snapback‐free while the PTC RC‐IGBT has a snapback voltage of 4.43 V. The peak forward recovery voltage of the proposed RC‐IGBT (12 V) is much lower than that of the PTC RC‐IGBT (246 V). Besides, the reverse recovery charge of the two RC‐IGBTs is 48% lower than that of the PiN diode.