Open Access58 GHz CMOS VCO with 16% efficiency
Author(s) -
Tibenszky Z.,
Carta C.,
Ellinger F.
Publication year - 2020
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2020.2015
Subject(s) - voltage controlled oscillator , cmos , electrical engineering , electronic engineering , computer science , telecommunications , engineering , voltage
This Letter presents a millimetre‐wave CMOS oscillator, which achieves 4.9 dBm output power with 16% peak power efficiency. A phase noise of − 98dBc / Hz at 1 MHz offset frequency and 26.7% tuning range around 57.5 GHz centre frequency were verified experimentally. To the best knowledge of the authors, the output power, efficiency, and phase noise performance are the best among fundamental CMOS oscillators in the frequency range of interest, while the tuning range is the third highest result reported to date. The circuit occupies a silicon area of ∼ 9000μm 2 without the matching inductors on a 22 nm fully depleted silicon on insulator (FD‐SOI) CMOS technology.