Open AccessDispersion effects in on‐state resistance of lateral Ga 2 O 3 MOSFETs at 300 V switching
Author(s) -
Böcker J.,
Tetzner K.,
Heucke S.,
Hilt O.,
BahatTreidel E.,
Dieckerhoff S.,
Würfl J.
Publication year - 2020
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2020.1286
Subject(s) - materials science , transistor , mosfet , voltage , optoelectronics , switching time , field effect transistor , ohmic contact , electrical engineering , engineering , nanotechnology , layer (electronics)
Static characterisation and fast switching processes of lateral β‐Ga 2 O 3 metal oxide semiconductor field‐effect transistors (MOSFETs) are presented. The investigated transistors with 10 mm gate width and 6 µm gate drain distance achieve on‐state resistances of 5 Ω and saturation currents above 2.4 A. Hard switching in a double pulse test setup with an inductive load results in voltage slopes up to 65 V/ns at 300 V input voltage. After longer blocking times and higher DC voltages, a strong dynamic increase in on‐state resistance occurs. Switching with an ohmic load and different load currents reveals only minor influence of the hot electron mechanism during the hard turn on. However, a clear influence of the turn‐on gate drive voltage on the dynamic increase is observed, indicating a shift of the transfer characteristic due to charge trapping in the gate region.