Low‐temperature‐grown gallium arsenide photoconductors with subpicosecond carrier lifetime and photoresponse reaching 25 mA/W under 1550 nm CW excitation | Zendy

Tannoury C. | Zendy; Billet M. | Zendy; Coi C. | Zendy; Lampin JF. | Zendy; Peytavit E. | Zendy

Open Access

Low‐temperature‐grown gallium arsenide photoconductors with subpicosecond carrier lifetime and photoresponse reaching 25 mA/W under 1550 nm CW excitation

Author(s) -

Tannoury C.,

Billet M.,

Coi C.,

Lampin JF.,

Peytavit E.

Publication year - 2020

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2020.1116

Subject(s) - gallium arsenide , optoelectronics , materials science , excitation , carrier lifetime , free carrier , gallium , silicon , electrical engineering , metallurgy , engineering

The authors show in this Letter that photoconductors based on GaAs grown at low temperatures can exhibit photoresponses as high as 25 mA/W under continuous‐wave 1550‐nm‐wavelength illumination. It is achieved by using an optical Fabry–Pérot cavity in order to improve the external quantum efficiency and by decreasing the post‐growth annealing temperature down‐to 450°C.

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