Open AccessLow‐temperature‐grown gallium arsenide photoconductors with subpicosecond carrier lifetime and photoresponse reaching 25 mA/W under 1550 nm CW excitation
Author(s) -
Tannoury C.,
Billet M.,
Coi C.,
Lampin JF.,
Peytavit E.
Publication year - 2020
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2020.1116
Subject(s) - gallium arsenide , materials science , optoelectronics , annealing (glass) , wavelength , excitation , gallium , indium arsenide , optics , physics , quantum mechanics , metallurgy , composite material
The authors show in this Letter that photoconductors based on GaAs grown at low temperatures can exhibit photoresponses as high as 25 mA/W under continuous‐wave 1550‐nm‐wavelength illumination. It is achieved by using an optical Fabry–Pérot cavity in order to improve the external quantum efficiency and by decreasing the post‐growth annealing temperature down‐to 450°C.