Open AccessEvaluation of lateral diffusion length in InAs/GaSb superlattice detectors grown by MOCVD
Author(s) -
Teng Yan,
Hao Xiujun,
Zhao Yu,
Wu Qihua,
Li Xin,
Liu Jiafeng,
Zhu He,
Chen Ying,
Zhu Hong,
Huang Yong
Publication year - 2020
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2020.1076
Subject(s) - superlattice , metalorganic vapour phase epitaxy , dark current , materials science , diffusion , optoelectronics , chemical vapor deposition , epitaxy , molecular beam epitaxy , photodiode , optics , photodetector , nanotechnology , physics , layer (electronics) , thermodynamics
The lateral diffusion length ( L h ) of minority carriers in LWIR InAs/GaSb superlattice detectors grown by metalorganic chemical vapour deposition was evaluated. The deeply‐etched PNn device exhibits a diffusion‐limited behaviour at 80 K, with a dark current density as low as 9.1 × 10 −6 A/cm 2 at −0.1 V and a 50% cut‐off of 10.1 μm. In shallow‐etched pixels with a common absorber, both the photo‐current and the dark current show a size‐dependent behaviour. L h deduced from the two methods are 211 and 251 μm, respectively, which are longer than those in superlattice materials grown by molecular beam epitaxy.