Open AccessVertical GaN MISFET for chip‐on‐chip high speed laser driving applications
Author(s) -
Bahat Treidel E.,
Christopher H.,
Hilt O.,
Klehr A.,
Ginolas A.,
Liero A.,
Würfl J.
Publication year - 2020
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2020.0896
Subject(s) - materials science , misfet , optoelectronics , vertical cavity surface emitting laser , parasitic element , chip , transistor , laser , gallium nitride , laser diode , diode , gallium arsenide , field effect transistor , electrical engineering , optics , voltage , nanotechnology , physics , layer (electronics) , engineering
In this work, the authors developed vertical gallium nitride metal‐insulator‐semiconductor field‐effect transistors (GaN MISFETs) for direct chip‐on‐chip assembly with gallium arsenide‐based broad area distributed Bragg reflector diode laser. The intention of this work had been to provide a high‐speed driver solution having extremely small parasitic inductive loops. It is shown that devices manufactured on ammonothermal substrates have large conduction current density above 1.7 kA/cm 2 , specific on‐state resistance as low as 2.1 mΩ·cm 2 and on‐state sheet resistance of 18.6 Ω·mm. It is further shown that scaling these devices to large gate periphery chips is possible. Finally, a low inductance vertical GaN MISFET on laser diode integration assembly is realised on an AlN ceramic board using a transistor chip with 142 mm gate width and 305 mΩ on‐state resistance. The arrangement enables 3.6 ns laser pulses at an emission wavelength at 904 nm and a peak optical power of 4 W.