Open Access106‐GHz bandwidth InP DHBT linear driver with a 3‐V ppdiff swing at 80 GBd in PAM‐4
Author(s) -
Hersent R.,
Jorge F.,
Duval B.,
Dupuy J.Y.,
Konczykowska A.,
Riet M.,
Nodjiadjim V.,
Mismer C.,
Blache F.,
Kasbari A.,
Ouslimani A.
Publication year - 2020
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2020.0654
Subject(s) - indium phosphide , heterojunction bipolar transistor , swing , common emitter , optoelectronics , bandwidth (computing) , amplifier , electrical engineering , materials science , heterojunction , power consumption , fabrication , bipolar junction transistor , transistor , electronic engineering , gallium arsenide , telecommunications , physics , computer science , power (physics) , engineering , cmos , voltage , quantum mechanics , acoustics , medicine , alternative medicine , pathology
This Letter reports the design, fabrication and characterisation of a new differential linear driver, fabricated in the III‐V Lab 0.7‐ μ m emitter width indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. Large‐signal electrical characterisation shows 80‐GBd symbol‐rate four‐level pulse amplitude (PAM‐4) modulation conjugated with a driver output swing of 3‐V ppdiff and a 0.74‐W power consumption. Thus resulting in a 1.22‐GBd driving efficiency, the highest in over 70‐GBd drivers' state‐of‐the‐art, at that date. Accordingly, S‐parameter measurements of the standalone linear driver exhibit the highest gain‐bandwidth product of 556 GHz, in that current state‐of‐the‐art.