Open AccessUltrathin barrier AlGaN/GaN hybrid‐anode‐diode with MOCVD in‐situ Si 3 N 4 ‐cap and LPCVD‐Si 3 N 4 bilayer passivation stack for dynamic characteristic improvement
Author(s) -
Zhou Qi,
Yang Xiu,
Zhu Liyang,
Chen Kuangli,
Han Xiaoqi,
Luo Zhihua,
Zhou Chunhua,
Chen Wanjun,
Zhang Bo
Publication year - 2020
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2020.0432
Subject(s) - metalorganic vapour phase epitaxy , materials science , optoelectronics , chemical vapor deposition , diode , anode , wide bandgap semiconductor , in situ , nanotechnology , layer (electronics) , electrode , chemistry , epitaxy , organic chemistry
A novel ultrathin barrier AlGaN/GaN hybrid‐anode‐diode (UTB‐HAD) with in‐situ Si 3 N 4 ‐cap passivation is experimentally demonstrated. The forward turn‐on voltage ( V on ) of the UTB‐HAD is determined by the intrinsic threshold voltage of the two‐dimension electron gas (2DEG) channel, which can be precisely controlled by tailoring the as‐grown AlGaN‐barrier thickness. The typical V on as low as 0.48 V is obtained by using the UTB AlGaN/GaN with a barrier thickness of 4.9 nm. The MOCVD has grown in‐situ Si 3 N 4 ‐cap and the LPCVD‐Si 3 N 4 bilayer passivation stack is developed to effectively restore the 2DEG in the UTB AlGaN/GaN heterostructure and simultaneously improve the dynamic characteristics of the diode. The UTB‐HAD and the novel passivation scheme are of great potential for power applications.