Open AccessHigh‐speed graded‐channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz
Author(s) -
Moon J.S.,
Grabar R.,
Wong J.,
Antcliffe M.,
Chen P.,
Arkun E.,
Khalaf I.,
Corrion A.,
Chappell J.,
Venkatesan N.,
Fay P.
Publication year - 2020
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2020.0281
Subject(s) - materials science , power density , amplifier , optoelectronics , transistor , power (physics) , high electron mobility transistor , extremely high frequency , channel (broadcasting) , power added efficiency , gallium nitride , electrical engineering , rf power amplifier , telecommunications , physics , layer (electronics) , engineering , voltage , nanotechnology , cmos , quantum mechanics
The authors report on highly scaled 60 nm gate length graded‐channel AlGaN/GaN high electron mobility transistors (HEMTs) with a record power added efficiency (PAE) of 75% at 2.1 W/mm power density at Vdd = 10 V and the PAE of 65% at 3.0 W/mm power density at 30 GHz at Vdd = 14 V. Under two‐tone power measurement, the graded‐channel AlGaN/GaN HEMTs demonstrated similar power performance with peak PAE >70% at 30 GHz. This novel channel design shows great promise for high‐efficiency millimetre‐wave (mmW) power amplifiers up to 3 W/mm RF power density operation.