High‐speed graded‐channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz | Zendy

Moon J.S. | Zendy; Grabar R. | Zendy; Wong J. | Zendy; Antcliffe M. | Zendy; Chen P. | Zendy; Arkun E. | Zendy; Khalaf I. | Zendy; Corrion A. | Zendy; Chappell J. | Zendy; Venkatesan N. | Zendy; Fay P. | Zendy

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High‐speed graded‐channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz

Author(s) -

Moon J.S.,

Grabar R.,

Wong J.,

Antcliffe M.,

Chen P.,

Arkun E.,

Khalaf I.,

Corrion A.,

Chappell J.,

Venkatesan N.,

Fay P.

Publication year - 2020

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2020.0281

Subject(s) - materials science , optoelectronics , channel (broadcasting) , power (physics) , high electron mobility transistor , gallium nitride , electrical engineering , electronic engineering , transistor , engineering , voltage , layer (electronics) , physics , nanotechnology , quantum mechanics

The authors report on highly scaled 60 nm gate length graded‐channel AlGaN/GaN high electron mobility transistors (HEMTs) with a record power added efficiency (PAE) of 75% at 2.1 W/mm power density at Vdd = 10 V and the PAE of 65% at 3.0 W/mm power density at 30 GHz at Vdd = 14 V. Under two‐tone power measurement, the graded‐channel AlGaN/GaN HEMTs demonstrated similar power performance with peak PAE >70% at 30 GHz. This novel channel design shows great promise for high‐efficiency millimetre‐wave (mmW) power amplifiers up to 3 W/mm RF power density operation.

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