Open AccessTwo‐way oxide rupture scheme for PUF implementation in low‐cost IoT systems
Author(s) -
Lee C.,
Lee J.,
Lee Y.
Publication year - 2020
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2020.0268
Subject(s) - scheme (mathematics) , randomness , overhead (engineering) , cmos , reduction (mathematics) , computer science , transistor , chip , electronic engineering , internet of things , cost reduction , embedded system , engineering , electrical engineering , mathematics , telecommunications , mathematical analysis , statistics , geometry , voltage , management , economics
A two‐way oxide rupture scheme in a transistor is proposed for area‐efficient PUF implementation for low‐cost IoT systems. Compared to a conventional one‐way oxide rupture scheme, which requires a 4T unit cell structure, the proposed scheme allows a 2T unit cell structure, which enables up to 70% area reduction. A test chip is fabricated in 180 nm CMOS process to evaluate the effectiveness of the proposed scheme, confirming good randomness and uniqueness with small area overhead.