Open AccessExploiting analogue OxRAM conductance modulation for contrast enhancement application
Author(s) -
Kumar A.,
Bezugam S. S.,
Hudec B.,
Hou T.H.,
Suri M.
Publication year - 2020
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2020.0106
Subject(s) - conductance , resistive touchscreen , modulation (music) , encoding (memory) , materials science , contrast (vision) , optoelectronics , intensity modulation , computation , frequency modulation , intensity (physics) , electronic engineering , optics , computer science , acoustics , physics , telecommunications , artificial intelligence , phase modulation , engineering , radio frequency , computer vision , algorithm , phase noise , condensed matter physics
The authors present a unique application of analogue oxide‐based resistive memory (OxRAM) device for sensor‐level information storage and computation. They show that quality of low‐contrast images in low‐light can be improved by carefully exploiting OxRAM conductance modulation from specific bi‐layer OxRAM material stacks. The proposed methodology involves conversion of light intensity to pulse frequency followed by resistance encoding as different non‐volatile OxRAM resistance states.