180 GHz high‐gain cascode power amplifier in a 130 nm SiGe process | Zendy

Li Xingcun | Zendy; Chen Wenhua | Zendy; Wang Yunfan | Zendy; Feng Zhenghe | Zendy

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180 GHz high‐gain cascode power amplifier in a 130 nm SiGe process

Author(s) -

Li Xingcun,

Chen Wenhua,

Wang Yunfan,

Feng Zhenghe

Publication year - 2020

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2019.4155

Subject(s) - cascode , amplifier , rf power amplifier , power bandwidth , electrical engineering , fully differential amplifier , power gain , bandwidth (computing) , power added efficiency , power (physics) , electronic engineering , materials science , open loop gain , operational amplifier , engineering , cmos , telecommunications , physics , quantum mechanics

A positive feedback gain‐enhanced technique for power amplifiers has been introduced in this Letter. With the proposed circuit design method for optimal inductive feedback, a 180 GHz high‐gain single‐stage cascode power amplifier in a 130 nm SiGe process is implemented. The measurement results show a power gain of 10 dB and 20 GHz bandwidth with 110 mW dc power are achieved, and 6.5 dBm of output power referred to P 1dB and 3.5% collector efficiency are attained. The chip area of the power amplifier is only 0.50 × 0.48 mm 2 .

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