Open Access650 mW/mm output power density of H‐terminated polycrystalline diamond MISFET at 10 GHz
Author(s) -
Yu Cui,
Zhou Chuang Jie,
Guo Jian Chao,
He Ze Zhao,
Wang Hong Xing,
Cai Shu Jun,
Feng Zhi Hong
Publication year - 2020
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2019.4110
Subject(s) - misfet , materials science , diamond , optoelectronics , dielectric , transistor , power density , semiconductor , crystallite , field effect transistor , electrical engineering , power (physics) , voltage , metallurgy , physics , quantum mechanics , engineering
In this work, metal–insulator–semiconductor field effect transistors (MISFET) with gate length of 350 nm were fabricated on hydrogen‐terminated polycrystalline diamond by a self‐aligned process. Aluminium film with thickness of 2 nm was evaporated on the sample and formed self‐oxidised alumina to act as the gate dielectric. The devices show good direct current and radio frequency performances with a maximum frequency of oscillation ( f max ) of 34 GHz and continuous‐wave output power density of 650 mW/mm at 10 GHz.