Open AccessGaSb‐based heterostructure with buried vacuum pocket photonic crystal layer
Author(s) -
Liu R.,
Shterengas L.,
Stein A.,
Kipshidze G.,
Jiang J.,
Hosoda T.,
Belenky G.
Publication year - 2020
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2019.3710
Subject(s) - photonic crystal , lasing threshold , materials science , heterojunction , optoelectronics , yablonovite , photonics , laser , electroluminescence , optics , molecular beam epitaxy , photonic integrated circuit , epitaxy , layer (electronics) , wavelength , nanotechnology , physics
The vacuum pocket retaining molecular beam epitaxial regrowth of the nano‐patterned GaSb surface was demonstrated. The high contrast 2D photonic crystal layer was incorporated into the test 2 µm emitting laser heterostructure. The photonic dispersion determined from angle‐resolved electroluminescence experiment showed four well‐resolved bands corresponding to the model predictions for the square lattice. The single‐mode lasing near 2 µm has been observed at the temperature corresponding to the alignment of the photonic crystal band‐edge states and the quantum well gain peak. The reference devices without the photonic crystal layer emitted trivial spectra and did not lase at any temperature.