Open AccessHigh voltage GaN p‐n diodes formed by selective area regrowth
Author(s) -
Armstrong A.M.,
Pickrell G.P.,
Allerman A.A.,
Crawford M.H.,
Glaser C.E.,
Smith T.,
Abate V.M.
Publication year - 2020
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2019.3587
Subject(s) - materials science , diode , optoelectronics , reverse leakage current , leakage (economics) , wafer , planar , breakdown voltage , etch pit density , dry etching , pin diode , etching (microfabrication) , voltage , schottky diode , electrical engineering , nanotechnology , computer science , economics , macroeconomics , engineering , computer graphics (images) , layer (electronics)
GaN p‐n diodes were formed by selective area regrowth on freestanding GaN substrates using a dry etch, followed by post‐etch surface treatment to reduce etch‐induced defects, and subsequent regrowth into wells. Etched‐and‐regrown diodes with a 150 μm diameter achieved 840 V operation at 0.5 A/cm 2 reverse current leakage and a specific on‐resistance of 1.2 mΩ·cm 2 . Etched‐and‐regrown diodes were compared with planar, regrown diodes without etching on the same wafer. Both types of diodes exhibited similar forward and reverse electrical characteristics, which indicate that etch‐induced defectivity of the junction was sufficiently mitigated so as not to be the primary cause for leakage. An area dependence for forward and reverse leakage current density was observed, suggesting that the mesa sidewall provided a leakage path.