
Short channels and mobility control of GAA multi stacked nanosheets through the perfect removal of SiGe and post treatment
Author(s) -
Bae D.I.,
Choi B.D.
Publication year - 2020
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2019.3459
Subject(s) - materials science , silicon , optoelectronics , layer (electronics) , silicon germanium , epitaxy , nanotechnology , electron mobility , electronic engineering , electrical engineering , engineering
As the most feasible alternative to FinFETs, gate‐all‐around (GAA) multi‐stacked nanosheets known as multi bridge channel FETs were recently introduced. To enjoy improved short channel control with high mobility and GAA characteristics, two critical processing challenges on channels should be overcome: the epitaxial growth of silicon/silicon germanium (Si/SiGe) multi stacks and the clean removal of SiGe. Si surface engineering after SiGe removal is a particularly crucial process. Various methods for removing the sacrificial SiGe layer to form nanosheets were tested in this Letter. Through the measurement of D it and a flat band voltage ( V fb ) shift, a remaining sacrificial SiGe layer was detected. After clean removal of the sacrificial SiGe layer and post cleaning, a D it of 5 × 10 11 cm −2 was achieved, which was similar to that achieved without the removal of SiGe.