Open AccessHigh performance floating p‐well carrier stored trench bipolar transistor with L‐shaped shield gates
Author(s) -
Zhang Jinping,
Zhao Qian,
Wang Kang,
Li Zehong,
Zhang Bo
Publication year - 2020
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2019.3458
Subject(s) - trench , shield , bipolar junction transistor , materials science , optoelectronics , electrical engineering , transistor , engineering , voltage , geology , nanotechnology , petrology , layer (electronics)
A novel floating p‐well carrier stored trench bipolar transistor with L‐shaped shield gates (LSG‐FP‐CSTBT) is proposed in this Letter. The proposed device features combinatorial L‐shaped shield gates with a thick oxide layer in the lower part of the trench. Numerical analysis results show that compared to the conventional FP‐CSTBT, the shield effect provided by the LSGs not only improves the trade‐off relationship between the on‐state voltage drop ( V CEON ) and turn‐off loss ( E OFF ), but also improves the trade‐off relationship between the turn‐on loss ( E ON ) of the device and reverse recovery d V AK / d t of the antiparallel freewheeling diode. Therefore, improved device performance and reduced electromagnetic interference noise are obtained.