1.3‐µm buried‐heterostructure VCSELs with GaAs/AlGaAs metamorphic DBRs grown by MOCVD | Zendy

Ohiso Y. | Zendy; Sato T. | Zendy; Shindo T. | Zendy; Matsuzaki H. | Zendy

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1.3‐µm buried‐heterostructure VCSELs with GaAs/AlGaAs metamorphic DBRs grown by MOCVD

Author(s) -

Ohiso Y.,

Sato T.,

Shindo T.,

Matsuzaki H.

Publication year - 2020

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2019.2958

Subject(s) - metalorganic vapour phase epitaxy , optoelectronics , heterojunction , materials science , gallium arsenide , metamorphic rock , epitaxy , nanotechnology , biology , layer (electronics) , paleontology

The authors report buried‐heterostructure long‐wavelength VCSELs with GaAs/AlGaAs metamorphic DBRs, which has a potential for low thermal resistance and operation in the single transverse mode with a large emission area. In spite of their being upside‐up and unmounted, they achieve CW operation at 17°C, and VCSELs with a 15‐µm mesa exhibit single‐mode operation.

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