Open Access1.3‐µm buried‐heterostructure VCSELs with GaAs/AlGaAs metamorphic DBRs grown by MOCVD
Author(s) -
Ohiso Y.,
Sato T.,
Shindo T.,
Matsuzaki H.
Publication year - 2020
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2019.2958
Subject(s) - materials science , optoelectronics , heterojunction , metalorganic vapour phase epitaxy , metamorphic rock , gallium arsenide , semiconductor laser theory , optics , epitaxy , semiconductor , nanotechnology , geology , physics , layer (electronics) , geochemistry
The authors report buried‐heterostructure long‐wavelength VCSELs with GaAs/AlGaAs metamorphic DBRs, which has a potential for low thermal resistance and operation in the single transverse mode with a large emission area. In spite of their being upside‐up and unmounted, they achieve CW operation at 17°C, and VCSELs with a 15‐µm mesa exhibit single‐mode operation.