Open AccessSnapback‐free reverse conducting IGBT with p‐poly trench‐collectors
Author(s) -
Huang Mingmin,
Li Jie,
Xie Changjiang,
Lai Li,
Gong Min
Publication year - 2020
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2019.2951
Subject(s) - snapback , insulated gate bipolar transistor , materials science , trench , optoelectronics , bipolar junction transistor , diode , transistor , electrical engineering , layer (electronics) , composite material , voltage , engineering
A reverse conducting (RC) insulated‐gate bipolar transistor (IGBT) with p‐poly trench‐collectors is proposed. A narrow n‐drift region between two p‐poly trench‐collectors is formed as a self‐controlled electron path to the collector contact. Owing to the built‐in potential between the p‐poly and n‐drift regions, the narrow n‐drift region is depleted to offer a high‐resistance electron path at forward bias, which helps to suppress snapback. At reverse bias, holes accumulate at the n‐drift/trench‐collector interface and then the potential difference between the p‐poly and n‐drift regions mainly drops at the thin oxide layer. Thus, the narrow n‐drift becomes undepleted to offer a low‐resistance electron path, and the RC diode can be turned on. Simulation results show that the proposed RC‐IGBT is able to suppress snapback with a much smaller cell width and obtain a 21% lower turn‐off loss compared to the conventional RC‐IGBT.