Open AccessElectrical characteristics of amorphous indium‐tin‐gallium‐zinc‐oxide TFTs under positive gate bias stress
Author(s) -
Kim D.,
Cho K.,
Woo S.,
Kim S.
Publication year - 2020
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2019.2784
Subject(s) - materials science , thin film transistor , amorphous solid , threshold voltage , optoelectronics , gallium , stress (linguistics) , subthreshold conduction , tin , zinc , band gap , acceptor , indium tin oxide , wide bandgap semiconductor , indium , transistor , voltage , thin film , electrical engineering , metallurgy , layer (electronics) , nanotechnology , condensed matter physics , chemistry , linguistics , philosophy , engineering , physics , organic chemistry
In this Letter, the authors investigate the electrical characteristics of amorphous indium‐tin‐gallium‐zinc‐oxide (a‐ITGZO) thin‐film transistors (TFTs) under positive gate bias stress (PBS). An as‐prepared a‐ITGZO TFT exhibits a mobility of 26.05 cm 2 /V⋅s, subthreshold swing of 183 mV, threshold voltage of −0.33 V, and on/off ratio of 1.34 × 10 8 . These electrical characteristics deteriorate upon the application of PBS. The proposed experiments and simulations reveal that this deterioration can be attributed to the increase in the density of acceptor‐like conduction band‐tail states and donor‐like Gaussian states within the bandgap of the a‐ITGZO channel material.