Open AccessPiezoelectric performance improvement of ScAlN film and two‐port SAW resonator application
Author(s) -
Dong Kaifei,
Wang Fang,
Deng Meng,
Yan Shuo,
Zhang Kailiang
Publication year - 2019
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2019.2714
Subject(s) - materials science , piezoelectricity , sputtering , resonator , optoelectronics , surface acoustic wave , sputter deposition , nitride , thin film , aluminium nitride , aluminium , acoustics , composite material , nanotechnology , layer (electronics) , physics
Highly c ‐axis‐oriented scandium‐doped aluminium nitride films (ScAlN) were prepared on platinum substrates by DC magnetron sputtering. The effect of sputtering power on the crystal quality and piezoelectric properties of ScAlN thin film was investigated. The test results show that the piezoelectric properties of the ScAlN film first strengthen and then weaken with the increase of sputtering power, and the optimal piezoelectric properties are obtained under the condition of 180 W. Furthermore, a surface acoustic wave (SAW) resonator with an interdigital transducer width of 500 nm was fabricated by electron beam lithography. The SAW device exhibits a resonant frequency of 1.887 GHz and a quality factor ( Q ) of 170.8.