Open AccessCurrent mirror‐based compensation circuit for multi‐row read in‐memory computing
Author(s) -
Lin Zhiting,
Fang Yaqi,
Peng Chunyu,
Lu Wenjuan,
Li Xuan,
Wu Xiulong,
Chen Junning
Publication year - 2019
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2019.2415
Subject(s) - compensation (psychology) , replica , computer science , linearity , electronic engineering , voltage , signal (programming language) , biasing , current mirror , non volatile memory , current (fluid) , computer hardware , electrical engineering , engineering , transistor , psychology , art , psychoanalysis , visual arts , programming language
Multi‐row read plays an important role in in‐memory computing and its precision affects the accuracy of the calculation. In this brief Letter, a discharge compensation method is proposed for the linearisation of multi‐row read operations in static RAM. Current mirrors are added to bitlines to compensate for the discharge voltage. With compensation, the integral non‐linearity decreases by 72% compared with the situation without compensation. In addition, a wordline signal generation circuit based on replica bitline is proposed to reduce area cost.