Open AccessDual‐channel trench‐gate tunnel FET for improved ON‐current and subthreshold swing
Author(s) -
Joshi T.,
Singh Y.,
Singh B.
Publication year - 2019
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2019.2219
Subject(s) - tunnel field effect transistor , trench , subthreshold swing , quantum tunnelling , swing , transistor , subthreshold conduction , current (fluid) , optoelectronics , field effect transistor , materials science , channel (broadcasting) , electrical engineering , engineering , voltage , nanotechnology , layer (electronics) , mechanical engineering
In this Letter, a dual‐channel trench‐gate tunnel field‐effect transistor (DCTG‐TFET) is proposed and investigated. The gate of DCTG‐TFET is placed vertically in a trench to create two channels which carry drain current in parallel. The proposed device dimensions are optimised to reduce channel resistance and tunnelling width for an appreciable increase in the ON‐state current ( I ON ). The performance of DCTG‐TFET is analysed using two‐dimensional simulations in the device simulator. The proposed DCTG‐TFET provides one order of magnitude improvement in I ON / I OFFcurrent ratio and 17 times reduction in subthreshold swing as compared to recently reported two‐source‐region tunnel field‐effect transistor structure.