Open AccessDynamic voltage‐sharing among series‐connected IGBTs during turning‐on process
Author(s) -
Zhu Jianxin,
Xing Yan,
Ding Shun,
Hu Haibing
Publication year - 2019
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2019.0739
Subject(s) - insulated gate bipolar transistor , signal edge , clamping , signal (programming language) , voltage , electrical engineering , enhanced data rates for gsm evolution , clamper , power (physics) , leading edge , pulse width modulation , pulse (music) , engineering , electronic engineering , series and parallel circuits , computer science , physics , telecommunications , analog signal , digital signal processing , mechanical engineering , quantum mechanics , aerospace engineering , programming language
An active clamping circuit for voltage sharing among series‐connected insulated gate bipolar translators (IGBTs) during turning‐on process is proposed at first, which detects the C–E voltage of the leading IGBT and generates gate pumping current to slow down the turning‐on speed, and thus reduces the voltage difference between the IGBTs. Then, a turn‐on edge regulation algorithm for the driving signal is proposed, which further reduces the voltage spike and turn‐on power loss, and optimises the regulation speed. A time detection circuit is introduced to detect the pulse signal indicating the working time of the active clamping circuit for driving signal regulation. The turn‐on edge regulation for each IGBT is determined by the feature that the rising edge of the detected pulse signal coincides with the corresponding IGBT turn‐on edge delay. The experimental results prove the feasibility and effectiveness of the proposed method.