Open AccessExperimental study of recovery time of a bulk gallium arsenide avalanche semiconductor switch in low‐energy‐triggered mode
Author(s) -
Hu Long,
Wang Yaogong,
Xu Ming
Publication year - 2019
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2019.0601
Subject(s) - gallium arsenide , materials science , optoelectronics , semiconductor , avalanche breakdown , semiconductor device , avalanche diode , voltage , laser , semiconductor laser theory , breakdown voltage , electrical engineering , optics , physics , nanotechnology , engineering , layer (electronics)
The authors present an experimental study of recovery time of a bulk gallium arsenide (GaAs) avalanche semiconductor switch that operates in low‐energy‐triggered mode. The voltage‐biased bulk GaAs avalanche semiconductor switch is first triggered to be in a conducting state by a laser pulse, and then the other biased voltage is applied without laser triggering after a delay time. The self‐breakdown will be observed experimentally in the bulk GaAs avalanche semiconductor switch by reduction of the delay time, and the recovery time can be achieved accordingly. When the biased voltage of the 0.625 mm thickn switch decreases from 5.0 to 2.0 kV the recovery time reduces from ∼4.4 to ∼1.3 µs.