Open AccessLow surface damage during ohmic contact formation in AlGaN/GaN HEMT by selective laser annealing
Author(s) -
Hou Mingchen,
Xie Gang,
Sheng Kuang
Publication year - 2019
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2019.0549
Subject(s) - materials science , ohmic contact , annealing (glass) , high electron mobility transistor , optoelectronics , x ray photoelectron spectroscopy , contact resistance , laser , sheet resistance , transistor , voltage , composite material , optics , electrical engineering , nuclear magnetic resonance , physics , layer (electronics) , engineering
The formation of ohmic contact in AlGaN/GaN high electron mobility transistor (HEMT) with low surface damage by selective laser annealing is reported. With selective laser annealing, the device exhibits a smaller sheet resistance, which is 74.9% of the device with the conventional rapid thermal annealing process. The dynamic ON‐resistance is 1.35 times higher than the static ON‐resistance after off‐state drain voltage stress of 200 V, which benefits from the low surface defects using laser annealing. While the dynamic ON‐resistance with rapid thermal annealing shows 8.66 times higher than the static ON‐resistance after off‐state drain voltage stress of 125 V. X‐ray photoelectron spectroscopy analysis indicates that the AlGaN surface damage related to the oxidation reaction under the high‐temperature condition is eliminated by using selective laser annealing, even in the air ambient.