Open AccessRead‐decoupled 8T1R non‐volatile SRAM with dual‐mode option and high restore yield
Author(s) -
Lin Zhiting,
Wang Yong,
Peng Chunyu,
Lu Wenjuan,
Li Xuan,
Wu Xiulong,
Chen Junning
Publication year - 2019
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2019.0295
Subject(s) - static random access memory , yield (engineering) , dual (grammatical number) , dual mode , computer science , electronic engineering , computer hardware , engineering , materials science , metallurgy , art , literature
This Letter proposes a read‐decoupled (RD) and average 8T1R non‐volatile static RAM (SRAM), RD‐8T1R. It uses only one memristor to achieve 2 × store energy reduction and higher restore yield compared with other two memristors based non‐volatile SRAMs. In addition, this structure can offer two alternative SRAM modes unlike previously known non‐volatile SRAMs, i.e. a high speed and a stable mode. Compared with existing technologies, the simulation results in TSMC‐65 nm show that the proposed scheme provides a remarkable restore yield. There are ∼ 154% improvement in the read static noise margin (@typical–typical (@TT) corner and stable mode) and ∼ 23% improvement in the read delay (@TT corner and high speed mode) compared with the previous 6T/7T/8 T non‐volatile SRAMs.