Substrate resistivity influence on silicon–germanium phototransistor performance | Zendy

Tegegne Z.G. | Zendy; Nanni J. | Zendy; Viana C. | Zendy; Tartarini G. | Zendy; Polleux J.L. | Zendy

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Substrate resistivity influence on silicon–germanium phototransistor performance

Author(s) -

Tegegne Z.G.,

Nanni J.,

Viana C.,

Tartarini G.,

Polleux J.L.

Publication year - 2019

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

ISSN - 1350-911X

DOI - 10.1049/el.2019.0203

Subject(s) - germanium , substrate (aquarium) , materials science , silicon , optoelectronics , photodiode , electrical resistivity and conductivity , electrical engineering , engineering , oceanography , geology

This Letter presents the impact of silicon substrate resistivity on SiGe phototransistors. SiGe phototransistors were fabricated on the commercially available SiGe/Si bipolar technology. The performances of the phototransistors fabricated based on low‐ and the high‐resistive silicon substrate are compared. The phototransistor based on low‐resistivity (LR) silicon substrate provides a responsivity of more than double compared to the phototransistor based on a high‐resistivity silicon substrate that is fabricated by using the same bipolar transistor technology. The phototransistor fabricated on LR substrate exhibits low‐frequency responsivity up to 1.35 A/W (at 50 MHz).

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