Open AccessSubstrate resistivity influence on silicon–germanium phototransistor performance
Author(s) -
Tegegne Z.G.,
Nanni J.,
Viana C.,
Tartarini G.,
Polleux J.L.
Publication year - 2019
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2019.0203
Subject(s) - germanium , substrate (aquarium) , materials science , silicon , optoelectronics , photodiode , electrical resistivity and conductivity , electrical engineering , engineering , oceanography , geology
This Letter presents the impact of silicon substrate resistivity on SiGe phototransistors. SiGe phototransistors were fabricated on the commercially available SiGe/Si bipolar technology. The performances of the phototransistors fabricated based on low‐ and the high‐resistive silicon substrate are compared. The phototransistor based on low‐resistivity (LR) silicon substrate provides a responsivity of more than double compared to the phototransistor based on a high‐resistivity silicon substrate that is fabricated by using the same bipolar transistor technology. The phototransistor fabricated on LR substrate exhibits low‐frequency responsivity up to 1.35 A/W (at 50 MHz).