Design of high‐efficiency CMOS rectifier with low reverse leakage for RF energy harvesting | Zendy

Kim Hyeonwoo | Zendy; Kwon Ickjin | Zendy

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Design of high‐efficiency CMOS rectifier with low reverse leakage for RF energy harvesting

Author(s) -

Kim Hyeonwoo,

Kwon Ickjin

Publication year - 2019

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2018.8143

Subject(s) - cmos , rectifier (neural networks) , reverse leakage current , electrical engineering , precision rectifier , mosfet , leakage (economics) , energy harvesting , energy conversion efficiency , electronic engineering , voltage , rectenna , ultra high frequency , materials science , engineering , power (physics) , computer science , transistor , power factor , diode , rectification , schottky diode , physics , stochastic neural network , machine learning , quantum mechanics , recurrent neural network , artificial neural network , economics , macroeconomics

A CMOS cross‐coupled RF rectifier that improves power conversion efficiency (PCE) with low reverse leakage current for energy harvesting wireless sensors is proposed. In this Letter, the authors propose a CMOS cross‐coupled differential RF rectifier that uses a thick‐oxide MOSFET as a rectifying device to improve PCE by reducing reverse leakage current. The proposed rectifier is designed for UHF band application using 0.18 µm CMOS technology. Proposed rectifier achieves a peak PCE of 75.2% and sensitivity of − 17 dBm for 1 V output voltage. Peak PCE is improved by 8.8% compared to the conventional rectifier.

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