Open AccessDemonstration of fully‐vertical GaN‐on‐Si power MOSFETs using regrowth technique
Author(s) -
Biswas D.,
Torii N.,
Yamamoto K.,
Egawa T.
Publication year - 2019
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2018.8118
Subject(s) - materials science , optoelectronics , fabrication , electrical resistance and conductance , transistor , equivalent series resistance , voltage , threshold voltage , conductance , semiconductor , power semiconductor device , electrical engineering , composite material , condensed matter physics , engineering , medicine , alternative medicine , physics , pathology
The authors are reporting for the first time the fabrication of GaN‐based fully‐vertical high‐power metal‐oxide‐semiconductor field effect transistors on Si. The electrical measurements of the fabricated device exhibited both vertical and lateral modes of operation. The transfer characteristics of the device in vertical mode showed a peak trans‐conductance ( G m , max ) of 23.6 mS/mm with a threshold voltage ( V th ) of − 19.6 V. The maximum current drain density ( I D , max ) of 249.3 mA/mm was observed with ON‐resistance ( R ON ) of 44.2 Ω ‐mm. The electrical results obtained in the vertical mode were also compared with the laterally oriented devices. The comparison of the electrical results indicates a relatively higher ON‐resistance of the device in the vertical configuration, due to the contribution of the series resistance of the buffer layers in the epi‐structure.