Open AccessMesa‐type quantum cascade lasers fabricated by using inductively coupled plasma reactive ion etching
Author(s) -
Seok B.T.,
Kim S.Y.,
Jun D.H.,
Jang J.H.
Publication year - 2019
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2018.7571
Subject(s) - inductively coupled plasma , optoelectronics , reactive ion etching , materials science , cascade , laser , plasma , etching (microfabrication) , dry etching , deposition (geology) , analytical chemistry (journal) , chemistry , optics , nanotechnology , layer (electronics) , physics , quantum mechanics , chromatography , sediment , biology , paleontology
Mesa‐type and ridge‐type InGaAs/InAlAs double‐channel quantum cascade lasers (QCLs) emitting 8.15 μm wavelength were fabricated by using metal–organic chemical vapour deposition and inductively coupled plasma reactive ion etching techniques. The output power, threshold current, characteristic temperature ( T 0 ), and slope efficiency were compared. The smooth and vertical sidewall profile enabled mesa‐type QCL to exhibit the higher output power, the lower threshold current, and the higher slope efficiency than the ridge‐type QCL.