212‐Gbit/s 2:1 multiplexing selector realised in InP DHBT | Zendy

Konczykowska A. | Zendy; Jorge F. | Zendy; Riet M. | Zendy; Nodjiadjim V. | Zendy; Duval B. | Zendy; Mardoyan H. | Zendy; Estaran J.M. | Zendy; Adamiecki A. | Zendy; Raybon G. | Zendy; Dupuy J.Y. | Zendy

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212‐Gbit/s 2:1 multiplexing selector realised in InP DHBT

Author(s) -

Konczykowska A.,

Jorge F.,

Riet M.,

Nodjiadjim V.,

Duval B.,

Mardoyan H.,

Estaran J.M.,

Adamiecki A.,

Raybon G.,

Dupuy J.Y.

Publication year - 2019

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2018.7545

Subject(s) - gigabit , multiplexing , optoelectronics , electrical engineering , indium phosphide , electronic engineering , materials science , telecommunications , computer science , engineering , gallium arsenide

In this Letter, the authors report on the design, optimisation and electrical measurements of a new fully integrated multiplexing selector fabricated in 0.7‐µm indium phosphide (InP) double‐heterojunction bipolar transistor technology. All parts of the circuit were optimised to obtain 200‐Gbit/s class of operation. They present electrical performances at 140 and to a record speed of 212 Gbit/s, highlighting their respective measurement challenges. The power consumption of the circuit is 0.5 and 0.8 W for a differential output amplitude of 240 and 730 mV, respectively. This selector has been successfully used as modulator driver in optical transmission experiments up to 204 Gbit/s.

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