Open AccessCharacteristics of hetero‐structured thermoelectric devices with a ‐ Si / Mg 2 Si‐stacked thin film layers
Author(s) -
Lee J.H.,
Ha J.,
Piyapatarakul T.,
Yoon C.,
Jeon B.,
Yoon G.
Publication year - 2018
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2018.6352
Subject(s) - materials science , optoelectronics , thermoelectric effect , thin film , nanotechnology , physics , thermodynamics
New high‐quality thermoelectric devices with amorphous silicon/magnesium silicide (a‐Si/Mg 2 Si)‐stacked hetero‐structure thin film layers have been fabricated using both radio frequency sputtering and rapid thermal annealing techniques. The thermoelectric properties of the a‐Si/Mg 2 Si hetero‐structure layers were found to be much superior to those of the a‐Si layer.
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