Node‐sharing low‐temperature poly silicon TFT shift register without bootstrapping degradation for narrow bezel displays | Zendy

Kim Y. | Zendy; Park S.J. | Zendy; Nam H. | Zendy

Open Access

Node‐sharing low‐temperature poly silicon TFT shift register without bootstrapping degradation for narrow bezel displays

Author(s) -

Kim Y.,

Park S.J.,

Nam H.

Publication year - 2018

Publication title -

electronics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.375

H-Index - 146

eISSN - 1350-911X

pISSN - 0013-5194

DOI - 10.1049/el.2018.5863

Subject(s) - thin film transistor , degradation (telecommunications) , bootstrapping (finance) , node (physics) , register (sociolinguistics) , materials science , silicon , optoelectronics , computer science , shift register , electrical engineering , electronic circuit , engineering , telecommunications , business , nanotechnology , structural engineering , layer (electronics) , linguistics , philosophy , finance

A small area shift register for narrow bezel display applications is demonstrated. The proposed circuit achieves the substantial reduction on the number of thin film transistors (TFTs) by sharing pull‐up as well as pull‐down nodes over multiple output pulses. In addition, there is no bootstrapping degradation caused by additional capacitors of pull‐up TFTs due to separating TFTs between pull‐up nodes. For four outputs per stage, the number of TFTs is reduced to 53%. The simulation results with low‐temperature poly silicon TFTs ensure that all pull‐up nodes of the proposed shift register with separating TFTs are boosted by larger than 12 V without any degradation.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research