Open AccessTIGBT with emitter‐embedded gate for low turn‐on loss and low electro‐magnetic interference noise
Author(s) -
Li Ping,
Cheng Junji,
Chen Xing bi
Publication year - 2018
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2018.5679
Subject(s) - interference (communication) , common emitter , turn (biochemistry) , noise (video) , electromagnetic interference , electrical engineering , optoelectronics , materials science , electronic engineering , physics , computer science , engineering , nuclear magnetic resonance , channel (broadcasting) , artificial intelligence , image (mathematics)
A trench insulated gate bipolar transistor (TIGBT) with emitter‐embedded gate is proposed. The emitter‐embedded gate could increase the gate‐to‐emitter capacitance C GE without affecting the miller capacitance C GC . Therefore, the ratio of C GC to C GE is significantly reduced, which suppresses the gate self‐charging effect effectively. As a result, an excellent controllability on the turn‐on d I CE /d t of the TIGBT and the d V KA /d t of the free‐wheeling diode (FWD) is obtained. The simulation results based on a 1.2 kV TIGBT show that, in comparison with the conventional TIGBT, the lower limit of the reverse‐recovery d V KA /d t of the FWD can be reduced by 91.2% and the turn‐on loss could be reduced by 53.1% under the same d V KA /d t .