TIGBT with emitter‐embedded gate for low turn‐on loss and low electro‐magnetic interference noise

A trench insulated gate bipolar transistor (TIGBT) with emitter‐embedded gate is proposed. The emitter‐embedded gate could increase the gate‐to‐emitter capacitance C GE without affecting the miller capacitance C GC . Therefore, the ratio of C GC to C GE is significantly reduced, which suppresses the gate self‐charging effect effectively. As a result, an excellent controllability on the turn‐on d I CE /d t of the TIGBT and the d V KA /d t of the free‐wheeling diode (FWD) is obtained. The simulation results based on a 1.2 kV TIGBT show that, in comparison with the conventional TIGBT, the lower limit of the reverse‐recovery d V KA /d t of the FWD can be reduced by 91.2% and the turn‐on loss could be reduced by 53.1% under the same d V KA /d t .