Open AccessLow phase noise oscillator stabilised by high quality factor AFSIW resonators
Author(s) -
Liu Zhiqiang,
Xu Jinping,
Wang Wenbo
Publication year - 2018
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
eISSN - 1350-911X
pISSN - 0013-5194
DOI - 10.1049/el.2018.5663
Subject(s) - phase noise , resonator , dbc , figure of merit , materials science , optoelectronics , offset (computer science) , q factor , oscillator phase noise , voltage controlled oscillator , noise figure , electrical engineering , physics , optics , amplifier , engineering , computer science , voltage , cmos , programming language
A novel X‐band low phase noise oscillator is proposed by taking advantage of the enhanced quality factor of air‐filled substrate integrated waveguide (AFSIW) resonators. A pair of AFSIW resonators is embedded in a feedback loop, which forms a high‐selectivity bandpass filter, to greatly reduce the phase noise of a heterojunction FET oscillator. A prototype is designed, fabricated and measured. At an output signal of 9.85 GHz, the phase noise is −146.8 dBc/Hz and the figure of merit is −210.6 dBc/Hz at 1 MHz offset frequency. An improvement of about 10 dB in phase noise performance is obtained compared with published substrate integrated waveguide resonator‐based oscillators.