Open AccessStudy on switch‐leakage‐induced dark offset of ambient light sensor
Author(s) -
Chae Jeongseok
Publication year - 2019
Publication title -
electronics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.375
H-Index - 146
ISSN - 1350-911X
DOI - 10.1049/el.2018.5547
Subject(s) - wafer , offset (computer science) , optoelectronics , leakage (economics) , transistor , materials science , fabrication , voltage , biasing , electrical engineering , computer science , engineering , medicine , alternative medicine , pathology , economics , macroeconomics , programming language
The dark offset which is the reference value of an ambient light sensor is analysed. It varies across the wafer when the temperature is increased because of the leakage current of switch transistors. The difference between before and after wafer revisions shows the clue of leakage current. Modern fabrication processes which change the threshold voltage of switch transistors are surveyed. To explain the discrepancy between test and survey data, some other process issues are discussed.